Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity.
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DOI: 10.1364/ol.454717
Abstract: In this work, we have proposed and fabricated a metal/Ga2O3/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector with low dark current and high responsivity. The Schottky contact of Ni/Ga2O3 makes the Ga2O3 layer fully depleted. The strong… read more here.
Keywords: ga2o3 gan; low dark; ga2o3; metal ga2o3 ... See more keywords