Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source–Drain FinFETs
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-016-5199-5
Abstract: The basic requirements on process design of extremely scaled devices involve appropriate work function and tight doping control due to their significant effect on the threshold voltage as well as other critical electrical parameters such… read more here.
Keywords: work function; function; source drain; metal gate ... See more keywords
Analytical Study of Effect of Channel Doping on Threshold Voltage of Metal Gate High-k SiGe MOSFET
Sign Up to like & getrecommendations! Published in 2017 at "Silicon"
DOI: 10.1007/s12633-017-9631-0
Abstract: The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for… read more here.
Keywords: mosfet; threshold voltage; channel doping; doping threshold ... See more keywords
Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET
Sign Up to like & getrecommendations! Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-00163-z
Abstract: In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D… read more here.
Keywords: variability wfv; variability; work function; electrical parameters ... See more keywords
Material lattice orientation effect of local Si 1-x Ge x stressors on the width dependence of high-k metal gate PMOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "Current Applied Physics"
DOI: 10.1016/j.cap.2017.11.015
Abstract: Abstract The novel material selection and fabrication became a major concern due to scaling limitations when the technology node was below 20 nm. Complex gate-last process step for high-k metal gate (HKMG) device was proposed to… read more here.
Keywords: material lattice; gate; metal gate; high metal ... See more keywords
Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.04.024
Abstract: Abstract This paper presented findings on statistical impact of mole fraction (x) on threshold voltage, on current, and off current in high-k/metal gate SiGe channel Tunnel FET (TFET) due to work function variability (WFV) of… read more here.
Keywords: metal gate; gate; high metal; grain ... See more keywords
Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.05.005
Abstract: Abstract Electrical properties of Y2O3/SiGe metal-oxide-semiconductor (MOS) capacitors with Al, Au, W and TiN gate electrodes have been evaluated in order to study the impact of the metal gate electrodes on Y2O3/SiGe interface properties. It… read more here.
Keywords: electrical properties; properties y2o3; gate electrodes; impact metal ... See more keywords
Carrier scattering in high-κ/metal gate stacks
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4978357
Abstract: A significant degradation of the mobility has been repeatedly observed at low inversion density in high-κ/metal gate metal-oxide-semiconductor field-effect transistors. However, the scattering mechanisms responsible for this degradation are still debated. It is often assumed… read more here.
Keywords: carrier scattering; metal; sio2 hfo2; metal gate ... See more keywords
Advanced FDSOI Device Design: The U-Channel Device for 7 nm Node and Beyond
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2809587
Abstract: In this paper, we propose the extendibility of ultra-thin body and box (UTBB) devices to 7 and 5 nm technology nodes focusing on electrostatics. A difficulty in scaling traditional UTBB is the need for SOI… read more here.
Keywords: fdsoi device; advanced fdsoi; electrostatics; metal gate ... See more keywords
A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2864581
Abstract: In this combined experiment and simulation study we investigate a SiGe/Si based gatenormal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is… read more here.
Keywords: dual metal; gate; effect; metal gate ... See more keywords
Performance Improvement Induced by Metal Gate Undercut for Ring Oscillator
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3264916
Abstract: The performance of 101-stage ring oscillator is effectively improved by the undercut process of metal gate for 28 nm high-k first metal gate-last planar CMOS technology. Using a simple over-etch process after dummy poly-Si gate… read more here.
Keywords: metal gate; gate undercut; gate; ring oscillator ... See more keywords
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2786144
Abstract: This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal… read more here.
Keywords: metal gate; light illumination; gate length; gate ... See more keywords