Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting Diodes.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c15303
Abstract: Throughout the development of III-nitride electronic and optoelectronic devices, electrically interfacing III-nitride semiconductors and metal schemes has been a long-standing issue that determines the contact resistance and operation voltage, which are tightly associated with the… read more here.
Keywords: resistance; engineering; metal schemes; metal ... See more keywords