A Study on the Effect of Microstructure Evolution of the Aluminum Metallization Layer on Its Electrical Performance During Power Cycling
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DOI: 10.1109/tpel.2019.2895695
Abstract: The study presented in this paper contributes to the quantification of the correlations between resistance degradation and Al metallization layer reconstruction observed in high-power insulated gate bipolar transistor (IGBT) modules during power cycling. The microstructure… read more here.
Keywords: metallization layer; metallization; power cycling; resistance ... See more keywords