Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2
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DOI: 10.1007/s11664-017-5937-3
Abstract: The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of two-dimensional MoS2 on sapphire (0001) have been investigated. Deposition was performed using molybdenum hexacarbonyl… read more here.
Keywords: metalorganic vapor; microscopy; vapor phase; mos2 ... See more keywords
Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0013391
Abstract: Two-dimensional transition metal dichalcogenide (TMD) semiconductors have risen as an important material class for novel nanoelectronic applications. Molybdenum disulfide (MoS2) is the most representative TMD compound due to its superior stability and attractive properties for… read more here.
Keywords: metalorganic vapor; van der; der waals; vapor phase ... See more keywords
Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
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DOI: 10.1063/5.0066263
Abstract: A record-long room-temperature photoluminescence (PL) lifetime ( τPLRT) of approximately 70 ps was obtained for the sub-bandgap 3.7 eV emission band of a 300-nm-thick c-plane Al0.83In0.17N epilayer for the use in cladding layers of an edge… read more here.
Keywords: metalorganic vapor; al0 83in0; vapor phase; 83in0 17n ... See more keywords
Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
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DOI: 10.35848/1882-0786/ab7712
Abstract: We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the… read more here.
Keywords: delta doped; metalorganic vapor; ga2o3; phase epitaxy ... See more keywords
Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy
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DOI: 10.7567/1882-0786/aafca8
Abstract: We have systematically investigated acceptor (Mg) and donor (Si) profiles at GaN tunnel junction interfaces with the aim of a low resistivity under reverse bias. We found that an overlap between Mg and Si at… read more here.
Keywords: tunnel; phase epitaxy; metalorganic vapor; gan tunnel ... See more keywords
Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
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DOI: 10.7567/apex.11.041001
Abstract: The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Hall-effect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at… read more here.
Keywords: metalorganic vapor; carrier compensation; compensation; compensation metalorganic ... See more keywords