InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD
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DOI: 10.1134/s1063782617050189
Abstract: InAs quantum dots (QDs) in a metamorphic InGaAs matrix are grown by MOVPE (metal-organic vapor-phase epitaxy) on GaAs substrates. The QDs emit light in the range 1380–1400 nm at room temperature. A multilayer metamorphic buffer… read more here.
Keywords: inas qds; qds metamorphic; metamorphic in0; layer ... See more keywords