Novel On-Resistance based Methodology for MOSFET Electrical Characterization
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DOI: 10.1016/j.sse.2019.107722
Abstract: Abstract A new methodology for MOSFET characterization making use of the on-resistance characteristics Ron(Vg,Vd) = Vd/Id(Vg,Vd) and associated derivatives dRon/dVg and dRon/dVd is proposed. This approach enables to eliminate the influence of source-drain series resistance Rsd not… read more here.
Keywords: resistance based; methodology; novel resistance; methodology mosfet ... See more keywords