Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers
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DOI: 10.1063/5.0052601
Abstract: Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and… read more here.
Keywords: ga2o3 schottky; schottky rectifiers; non equilibrium; doped ga2o3 ... See more keywords