Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14051074
Abstract: The single-event effect reliability issue is one of the most critical concerns in the context of space applications for SiC VDMOS. In this paper, the SEE characteristics and mechanisms of the proposed deep trench gate… read more here.
Keywords: vdmos; mev cm2; ctsj sic; sic vdmos ... See more keywords