Low-temperature characteristics of magnesium fluoride based bipolar RRAM devices.
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DOI: 10.1039/d1nr05887h
Abstract: This study investigates the temperature-independent switching characteristics of magnesium fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K down to 77 K. Filament type resistive switching at the interface of Ti/MgFx… read more here.
Keywords: magnesium fluoride; mgfx; temperature; characteristics magnesium ... See more keywords
Effects of the Operating Ambiance and Active Layer Treatments on the Performance of Magnesium Fluoride Based Bipolar RRAM
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12040605
Abstract: This study investigates switching characteristics of the magnesium fluoride (MgFx)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition of the amorphous MgFx active layer… read more here.
Keywords: magnesium fluoride; mgfx; layer; layer treatments ... See more keywords