Investigation of Different Oxygen Partial Pressures on MgGa2O4-Resistive Random-Access Memory
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DOI: 10.1021/acsomega.2c04222
Abstract: Different oxygen partial-pressure MgGa2O4-resistive RAMs (RRAMs) are fabricated to investigate the resistive switching behaviors. The X-ray photoelectron spectroscopy results, set voltage, reset voltage, cycling endurance, and retention time are drawn for comparison. With the increasing… read more here.
Keywords: different oxygen; mgga2o4 resistive; oxygen partial; oxygen ... See more keywords