Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
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DOI: 10.1016/j.sse.2017.06.003
Abstract: Abstract Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high- k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk… read more here.
Keywords: bias temperature; noise; sion; mghk mosfets ... See more keywords