Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures
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DOI: 10.1039/c8tc05795h
Abstract: Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices. read more here.
Keywords: algan gan; interfacial coupling; strong interfacial; mgo algan ... See more keywords