Sign Up to like & get
recommendations!
1
Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2016.09.010
Abstract: MRAM technology offers the opportunity to provide all the advantages of the most popular types of memory, such as DRAM, SRAM and FLASH with none of its disadvantages. Magnetic tunnel junctions (MTJs) based on CoFeB/MgO/CoFeB…
read more here.
Keywords:
mgo;
mgo barrier;
cofeb;
based cofeb ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.01.045
Abstract: Abstract The first principle comparative study of a novel single Al sheet embedded MgO and pure MgO barrier having Fe electrodes magnetic tunnel junction has been presented. Al embedded MgO is reported to provide enhanced…
read more here.
Keywords:
mgo barrier;
first principle;
barrier mtj;
study ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4985300
Abstract: We have investigated the effects of in-situ post-oxidation (PO) of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ) and found that the short error rate was significantly reduced, the magnetoresistance (MR) ratio…
read more here.
Keywords:
mgo barrier;
post oxidation;
situ post;
barrier ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2870731
Abstract: Spintronic sensors, which are based on the tunneling-magnetoresistive (TMR) effect, have been utilized in detecting low-magnetic fields. However, still no computer-based model of these devices is available to integrated circuit designer to implement them in…
read more here.
Keywords:
mgo barrier;
spintronic cmos;
hybrid spintronic;
model ... See more keywords