Colossal Magnetoresistive Switching Induced by d0 Ferromagnetism of MgO in a Semiconductor Nanochannel Device with Ferromagnetic Fe/MgO Electrodes
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DOI: 10.1002/adma.202307389
Abstract: Exploring potential spintronic functionalities in resistive switching (RS) devices is of great interest for creating new applications, such as multifunctional resistive random‐access memory and novel neuromorphic computing devices. In particular, the importance of the spin‐triplet… read more here.
Keywords: mgo electrodes; ferromagnetism; device; mgo ... See more keywords