Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.11.026
Abstract: Abstract Saving energy and reducing operation parameter fluctuations remain crucial for enabling resistive random access memory (RRAM) to emerge as a universal memory. In this work, we report a resistive memory device based on an… read more here.
Keywords: resistive memory; surface; amorphous mgo; mgo film ... See more keywords
Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)2 and H2O
Sign Up to like & getrecommendations! Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.08.038
Abstract: Abstract MgO films were deposited on Si via atomic layer deposition (ALD) using Mg(EtCp)2 and H2O precursors and their thermal stability was examined as a function of the post-deposition annealing (PDA) temperature. The characteristic self-limiting… read more here.
Keywords: mgo; atomic layer; mgo film; deposition ... See more keywords
Influence of activation parameters on the thickness of MgO thin film on Ag-3Mg alloy and its secondary electron emission property
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DOI: 10.1016/j.materresbull.2016.12.002
Abstract: Abstract MgO thin films of different thicknesses were prepared on polished Ag-3wt%Mg alloy by an activation process at 500–650 °C under oxygen pressures of 0.5–10.0 Pa. The influence of the thickness of MgO film on the secondary… read more here.
Keywords: thickness mgo; secondary electron; mgo film; film ... See more keywords