Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT
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DOI: 10.1007/s10825-019-01365-9
Abstract: A systematic theoretical study is carried out on the microwave noise performance of an InAs-based dual-quantum-well double-gate high-electron mobility transistor. The proposed dual-quantum-well HEMT shows prominent small-signal analog/radiofrequency (RF) and noise performance. The results for… read more here.
Keywords: quantum well; dual quantum; frequency; noise ... See more keywords