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Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3264983
Abstract: In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According…
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Keywords:
mini leds;
ingan gan;
green ingan;
multiple quantum ... See more keywords
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Published in 2025 at "Optics express"
DOI: 10.1364/oe.558548
Abstract: Femtosecond laser has greatly enabled the development of high-resolution, high-aspect-ratio and damage-free nano-processing. In this study, we adopted single- and multifocal femtosecond laser stealth dicing to fabricate the on-wafer GaN-based mini-LEDs grown on sapphire. Due…
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Keywords:
aspect ratio;
femtosecond laser;
mini leds;
multifocal femtosecond ... See more keywords
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Published in 2025 at "Optics letters"
DOI: 10.1364/ol.577320
Abstract: Owing to the low refractive index of conventional passivation materials and sidewall defects, AlGaInP-based red miniaturized light-emitting diodes (mini-LEDs) suffer from low light extraction efficiency (LEE) and external quantum efficiency (EQE). Here, we propose a…
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Keywords:
layer;
hfo2 based;
passivation layer;
mini leds ... See more keywords
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1
Published in 2021 at "Nanomaterials"
DOI: 10.3390/nano11092395
Abstract: Mini-light-emitting diodes (mini-LEDs) were combined with multiple three-dimensional (3D) diffuse reflection cavity arrays (DRCAs) to produce thin, large-area, high-brightness, flat light source modules. The curvature of the 3D free-form DRCA was optimized to control its…
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Keywords:
large area;
mini leds;
light;
thin large ... See more keywords