Long Minority‐Carrier Diffusion Length and Low Surface‐Recombination Velocity in Inorganic Lead‐Free CsSnI3 Perovskite Crystal for Solar Cells
Sign Up to like & getrecommendations! Published in 2017 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201604818
Abstract: Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their… read more here.
Keywords: diffusion; solar cells; cssni3; minority carrier ... See more keywords
Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials
Sign Up to like & getrecommendations! Published in 2017 at "Advanced Energy Materials"
DOI: 10.1002/aenm.201700167
Abstract: Time-resolved photoluminescence (TRPL) is a powerful characterization technique to study carrier dynamics and quantify absorber quality in semiconductors. The minority carrier lifetime, which is critically important for high-performance solar cells, is often derived from TRPL… read more here.
Keywords: study; kesterite materials; carrier lifetime; carrier ... See more keywords
Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-016-5124-y
Abstract: We report measurements of the minority-carrier diffusion length of n-type In0.53Ga0.47As epilayer samples using the surface photovoltage (SPV) method, and the minority-carrier lifetime of the same samples obtained by the microwave photoconductivity decay (μ-PCD) method.… read more here.
Keywords: diffusion length; minority; minority carrier; carrier diffusion ... See more keywords
Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II–VI and III–V MWIR Detector Technologies for Space Applications
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5628-0
Abstract: The degradation of the minority-carrier recombination lifetime of various III–V nBn and II–VI HgCdTe midwave-infrared space detector materials under stepwise 63-MeV proton irradiation up to fluence of 7.5 × 1011 cm−2 and above has been measured using time-resolved… read more here.
Keywords: iii; detector; carrier; rate ... See more keywords
Investigation of minority carrier traps in p-type mc-Si: Effect of firing and laser annealing
Sign Up to like & getrecommendations! Published in 2021 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2021.111341
Abstract: Abstract Recently, it has been shown that the investigation of minority carrier traps (traps) is a useful method to study defects in silicon wafers. In this paper, we report the presence of traps in p-type… read more here.
Keywords: traps type; carrier traps; investigation minority; laser annealing ... See more keywords
Measuring the minority carrier diffusion length in n-GaN using bulk STEM EBIC
Sign Up to like & getrecommendations! Published in 2018 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927618009698
Abstract: Gallium nitride is currently being investigated for demanding applications such as high-temperature and high-power electronics as well as space-based or other high radiation exposure applications. It has a wide bandgap and is more resistant than… read more here.
Keywords: diffusion length; minority; minority carrier; carrier diffusion ... See more keywords
On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon.
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c17549
Abstract: Boron-doped Czochralski-grown silicon wafers dominate the photovoltaic market. Light-induced degradation of these wafers is one of the most significant roadblocks for high-efficiency solar cells. Despite a very large number of publications on this topic, only… read more here.
Keywords: degradation; light induced; induced degradation; minority carrier ... See more keywords
Deep-level defects in high-voltage AlGaAs p–i–n diodes and the effect of these defects on the temperature dependence of the minority carrier lifetime
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0018317
Abstract: The variation of the effective lifetime of minority carrier lifetime τeff with temperature has been studied in the temperature range 300–580 K in AlxGa1−xAs base regions of p+–p0–i–n0–n+ high-voltage GaAs–AlGaAs diodes grown by liquid-phase epitaxy. It… read more here.
Keywords: high voltage; temperature; algaas diodes; level ... See more keywords
Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0022317
Abstract: Monolithic integration of III–V-based optoelectronic devices onto Si wafers provides enormous benefits to many device manufacturing technologies. Therefore, it is essential to understand the effect of limiting factors such as dislocations on the material properties.… read more here.
Keywords: carrier lifetimes; surface; carrier; minority carrier ... See more keywords
Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0136409
Abstract: The effect of majority carrier concentration and minority carrier lifetime on the performance of mid-wave infrared ( λ cutoff = 5.5 μ m ) nBn detectors with variably doped InGaAs/InAsSb type-II superlattice absorbers is… read more here.
Keywords: carrier lifetime; carrier; minority carrier; detector ... See more keywords
Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0150029
Abstract: Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 1019 cm−3. By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface… read more here.
Keywords: minority carrier; spectroscopy; diffusion length; carrier diffusion ... See more keywords