Effective lifetimes of minority carriers in time-resolved photocurrent and photoluminescence of a doped semiconductor: Modelling of a GaInP solar cell
Sign Up to like & getrecommendations! Published in 2019 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2019.01.029
Abstract: Abstract A generalized model for temperature-dependent time-resolved photocurrent of minority charge carriers in doped semiconductors is developed. The model is then applied to quantitatively interpret the time-resolved photocurrent data of a GaInP solar cell at… read more here.
Keywords: time resolved; photocurrent photoluminescence; resolved photocurrent; minority ... See more keywords
Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2020.2967035
Abstract: Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three… read more here.
Keywords: inversion layer; recombination; minority carriers;
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617080231
Abstract: An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base… read more here.
Keywords: voltage; minority carriers; high current; injection ... See more keywords