Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.06.041
Abstract: Abstract In this work, GaN-on-Si power Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) are irradiated through different regimes of cumulative γ-ray irradiation, namely 1, 2, 3, 4, and 5 kGy for the first sample; 1, 3, and… read more here.
Keywords: irradiation; ray irradiation; power; cumulative ray ... See more keywords
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.09.028
Abstract: Abstract In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics. Although GaN MIS-HEMTs have been suffering from the instability of… read more here.
Keywords: gan based; gate; hemts; mis hemts ... See more keywords
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2023.3265372
Abstract: In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) platform. The DG-NAND circuit has… read more here.
Keywords: dual gate; mis hemts; mode device; gan mis ... See more keywords
Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.3016394
Abstract: Low temperature (LT) and high pressure oxidized (HPO) Al2O3 is investigated as a gate dielectric for AlInN/GaN MIS-HEMTs. The time and temperature of the oxidation process was optimized for best performance. X-ray photoelectron spectroscopic (XPS)… read more here.
Keywords: sub sub; sub; temperature; gate ... See more keywords
Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2723932
Abstract: Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to… read more here.
Keywords: alinn gan; mis hemts; gate leakage; hemts ... See more keywords
Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091396
Abstract: In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH3 flow during the deposition of SiNx… read more here.
Keywords: gate; gate dielectric; mis hemts; leakage current ... See more keywords
Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14061100
Abstract: A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD)… read more here.
Keywords: aln gan; mis hemts; aln; gan mis ... See more keywords
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sign Up to like & getrecommendations! Published in 2020 at "Nanomaterials"
DOI: 10.3390/nano10112175
Abstract: The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO2 gate dielectric… read more here.
Keywords: gan based; dielectric layer; gate; gate dielectric ... See more keywords