Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization
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DOI: 10.1007/s10854-019-02224-w
Abstract: An Au/Pr6O11/n-GaN metal/insulator/semiconductor (MIS) junction was prepared with a high-k praseodymium oxide insulator layer and probed its structural, chemical and electrical characteristics by XRD, TEM, XPS, I–V and C–V approaches. XRD, TEM and XPS examinations… read more here.
Keywords: mis junction; gan schottky; pr6o11; insulator ... See more keywords
Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer
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DOI: 10.1007/s11664-018-6539-4
Abstract: The interface properties of a Au/n-GaN Schottky junction (SJ) were modified by placing a high-k barium strontium titanate (Ba0.6Sr0.4TiO3) insulating layer between the Au and n-GaN semiconductor. The surface morphology, chemical composition, and electrical properties… read more here.
Keywords: mis junction; 6sr0 4tio3; insulating layer; ba0 6sr0 ... See more keywords
Microstructural, chemical and electrical characteristics of Au/magnetite (Fe3O4)/n-GaN MIS junction with a magnetite interlayer
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DOI: 10.1016/j.vacuum.2019.03.025
Abstract: Abstract Magnetite (Fe3O4) layers were prepared on n-type GaN surface by the e-beam method and its microstructural and compositional characteristics were evaluated by XRD, XPS and TEM techniques. The XRD, XPS and TEM evaluations confirmed… read more here.
Keywords: fe3o4 layer; fe3o4 gan; mis junction; magnetite fe3o4 ... See more keywords