Interface properties of MIS structures based on hetero-epitaxial graded-gap Hg 1-x Cd x Te with CdTe interlayer created in situ during MBE growth
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.08.025
Abstract: Abstract Heterostructures based on n-Hg1-xCdxTe (x = 0.23–0.40) with near-surface graded-gap layers were grown by molecular beam epitaxy on Si (013) substrates. At 77 K, the admittance of the In/Al2O3/Hg1-xCdxTe metal-insulator-semiconductor (MIS) structures with grown in situ CdTe… read more here.
Keywords: hg1 xcdxte; graded gap; cdte; mis structures ... See more keywords
Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators
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DOI: 10.1134/s1063782618080201
Abstract: An insulator layer of ErF3, YF3, NdF3, and TmF3 was formed in n-type Ge-based MIS (metal–insulator–semiconductor) structures. It is shown that no negative effective charge is observed in these Ge MIS structures, while the degradation… read more here.
Keywords: modulation charge; charge; charge germanium; mis structures ... See more keywords
Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La2O3 Passivation Layer
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DOI: 10.3390/ma11112333
Abstract: In this paper, the impact of La2O3 passivation layers on the interfacial properties of Ge-based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that the formation of a thermodynamically stable LaGeOx component by incorporating a… read more here.
Keywords: inserting la2o3; interfacial properties; passivation; layer ... See more keywords