Crack-free GaN-based ultraviolet multiple quantum wells structures grown on AlN/2° misoriented sapphire template
Sign Up to like & getrecommendations! Published in 2018 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2018.08.008
Abstract: Abstract An approach of growing crack-free GaN-based InGaN-multiple quantum wells (MQWs) with emission at 365 nm on AlN template, instead of conventional GaN template, by metal-organic chemical vapor deposition is presented. The AlN template used here… read more here.
Keywords: quantum; misoriented sapphire; microscopy; template ... See more keywords