Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling
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DOI: 10.1021/acsomega.2c04888
Abstract: β-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of… read more here.
Keywords: mist cvd; growth; film; sapphire substrate ... See more keywords