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Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4974065
Abstract: The anisotropic magnetoresistance (AMR) effect and the anomalous Hall effect (AHE) were investigated in the temperature range of 5–300 K for a pseudo-single-crystal Mn4N thin film. The sign of the AMR ratio changed from positive…
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Keywords:
crystal mn4n;
temperature;
mn4n thin;
single crystal ... See more keywords
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Published in 2022 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2021.3085853
Abstract: Direct epitaxial integration of magnetic layers with wide bandgap nitride semiconductors will enable spin-controlled transport and photonic phenomena, seeding ideas for functional spintronic devices. Using plasma-assisted molecular beam epitaxy (MBE) in a previously unexplored window,…
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Keywords:
molecular beam;
mn4n layers;
beam epitaxy;
mn4n ... See more keywords
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Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13101672
Abstract: Mn4N thin film is one of the potential magnetic mediums for spintronic devices due to its ferrimagnetism with low magnetization, large perpendicular magnetic anisotropy (PMA), thermal stability, and large domain wall velocity. Recent experiments confirmed…
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Keywords:
cuxpt1;
moriya interaction;
mn4n;
dzyaloshinskii moriya ... See more keywords