Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis
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DOI: 10.3390/ma15196736
Abstract: The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role… read more here.
Keywords: carrier mobilities; mobilities sic; sic mosfets; study carrier ... See more keywords