Investigation of the Determining Factors for the “Mobility Boost” in High‐k‐Gated Transparent Oxide Semiconductor Thin‐Film Transistors
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202001037
Abstract: In metal‐oxide thin‐film transistors (TFTs), high‐k gate dielectrics often yield a higher electron mobility than SiO2. However, investigations regarding the mechanism of this high‐k “mobility boost” are relatively scarce. To explore this phenomenon, solution‐processed In2O3… read more here.
Keywords: mobility boost; gate capacitance; mobility; oxide semiconductor ... See more keywords