High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0152677
Abstract: Despite its long history, synthesizing n-type polycrystalline Ge layers with high-electron mobility on insulating substrates has been difficult. Based on our recently developed solid-phase crystallization technology, here, we have demonstrated the highest recorded electron mobility… read more here.
Keywords: mobility doped; polycrystalline; doped polycrystalline; high electron ... See more keywords