Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c00609
Abstract: The electronic structure as well as the mechanism underlying the high-mobility two-dimensional electron gases (2DEGs) at complex oxide interfaces remain elusive. Herein, using soft X-ray angle-resolved photoemission spectroscopy (ARPES), we present the band dispersion of… read more here.
Keywords: mobility enhancement; oxide interfaces; mobility; electronic structure ... See more keywords
First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2756061
Abstract: High quality ultrathin body (UTB)-Ge-on-insulator (GeOI) substrates have been fabricated with advanced layer transfer technology called HEtero-Layer-Lift-Off. With precise control of interfacial qualities, Ge crystallinity and thickness fluctuation in GeOI substrates, electron mobility of UTB-GeOI… read more here.
Keywords: geoi; mobility; mobility enhancement; utb geoi ... See more keywords
A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2913699
Abstract: A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test… read more here.
Keywords: threshold voltage; voltage mobility; thin film; series resistance ... See more keywords
Mobility Enhancement in Polycrystalline Silicon Thin Film Transistors due to the Dehydrogenation Mechanism
Sign Up to like & getrecommendations! Published in 2018 at "Journal of the Korean Physical Society"
DOI: 10.3938/jkps.73.1329
Abstract: We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a N2 ambient or an ex-situ… read more here.
Keywords: dehydrogenation; thin film; poly; mobility enhancement ... See more keywords