Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
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DOI: 10.1016/j.sse.2019.03.027
Abstract: Abstract The effective mobility in 4H-SiC trench metal-oxidesemiconductor field-effect transistors (MOSFETs) with an n-channel region on the 1 1 - 00 face, corresponding to the trench sidewalls, is investigated. Using a previously proposed mobility model,… read more here.
Keywords: mobility; effective mobility; scattering mobility; mobility sic ... See more keywords