Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition
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DOI: 10.1039/c9tc01297d
Abstract: Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. The hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth… read more here.
Keywords: sno epitaxial; mobility sno; films grown; grown pulsed ... See more keywords