Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202202019
Abstract: The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet… read more here.
Keywords: algan gan; mobility transistor; high electron; gan high ... See more keywords
InP/ZnS quantum dots functionalized AlGaAs/InGaAs open gate high electron mobility transistor
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-018-9134-9
Abstract: The InP/ZnS quantum dots were employed to modify the gate area of AlGaAs/InGaAs high electron mobility transistor. The charge distribution state in the quantum dots would affect the surface potential of the high electron mobility… read more here.
Keywords: mobility transistor; high electron; quantum dots; electron mobility ... See more keywords
Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106959
Abstract: Abstract This paper presents a detailed investigation of the degradation of two (Pt/Au)–Al0.2Ga0.8N/GaN/Al2O3 high-electron-mobility transistor(HEMT) structures, denoted as HEMT1 and HEMT2, by capacitance–voltage (C–V), forward current–voltage (I–V), and capacitance deep-level transient spectroscopy (DLTS)measurements in the… read more here.
Keywords: deep level; mobility transistor; level; high electron ... See more keywords
Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2021.3060795
Abstract: We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is… read more here.
Keywords: double mixing; mobility transistor; electron mobility; high electron ... See more keywords
Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15196895
Abstract: A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al2O3/ZrO2 stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance… read more here.
Keywords: mobility transistor; high electron; zro2 stacked; electron mobility ... See more keywords