Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202211738
Abstract: Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges… read more here.
Keywords: contact; high electron; gan high; ti3c2tx mxene ... See more keywords
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
Sign Up to like & getrecommendations! Published in 2018 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2018.07.015
Abstract: Abstract This paper reviews the rapid advancements being made in the development of high electron mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) and terahertz (300 GHz to 3.5 THz) frequency applications. The… read more here.
Keywords: frequency; inp hemts; high electron; mobility transistors ... See more keywords
Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abd265
Abstract: In this paper, we present an improved analytical model for predicting thermal noise in high-electron-mobility transistors (HEMTs) that considers the material’s intrinsic properties at the nanoscale, specifically, its permittivity and melting point. The developed model… read more here.
Keywords: thermal noise; high electron; mobility transistors; electron ... See more keywords
Effect of defects properties on InP-based high electron mobility transistors
Sign Up to like & getrecommendations! Published in 2019 at "Chinese Physics B"
DOI: 10.1088/1674-1056/28/7/078501
Abstract: The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band… read more here.
Keywords: based high; high electron; mobility transistors; inp based ... See more keywords
Flexible AlGaInN/GaN Heterostructures for High-Hole-Mobility Transistors
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2720480
Abstract: We study the potential and feasibility of high hole mobility transistors (HHMTs) based on flexible AlGaInN/GaN heterostructures using numerical simulation. We develop a map for the sheet density of two-dimensional hole gas (2DHG) at different… read more here.
Keywords: tex math; hole; mobility transistors; inline formula ... See more keywords
Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2017.2773065
Abstract: Due to the high dissipated power densities present in GaN high-electron-mobility transistors (HEMTs) in high-power radio frequency applications, thermal analysis and thermal management of these devices are important in achieving their full potential. In this… read more here.
Keywords: gan high; time; high electron; time constants ... See more keywords
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2842205
Abstract: AlGaN/GaN high-electron mobility transistors (HEMTs) and metal–oxide–semiconductor (MOS)-HEMTs using HfO2 as a gate dielectric have been analyzed at room temperature, after short thermal annealing (STA) and thermal cycle tests, during off-state electrical step stress, high-temperature… read more here.
Keywords: mos hemts; algan gan; high electron; hemts ... See more keywords