Atomic surface control of Ge(100) in MOCVD reactors coated with (Ga)As residuals
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.150513
Abstract: Abstract Heteroepitaxy of planar, low-defect III-V semiconductor layers on Ge(100) requires a single-domain substrate surface, where dimer rows are aligned in parallel on atomically well-ordered terraces, which are separated by steps of even numbered atomic… read more here.
Keywords: control; surface; spectroscopy; 100 surface ... See more keywords
Epitaxial growth of AlN microwalls on wet etched GaN template by MOCVD
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.07.011
Abstract: Abstract This paper reports on the unique approach adopted for the growth of vertically aligned two-dimensional AlN microwall arrays by a catalyst-free metal organic chemical vapor deposition (MOCVD) system via a two-step growth method. Wall-like… read more here.
Keywords: aln microwalls; template; growth aln; growth ... See more keywords
Preparation of Cu/MgO catalysts for γ-valerolactone hydrogenation to 1,4-pentanediol by MOCVD
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Fuel Chemistry and Technology"
DOI: 10.1016/s1872-5813(17)30028-2
Abstract: Abstract The laminar MgO with high specific area and the organometallic precursor Cu(acac) 2 were used for the successful synthesis of Cu/MgO catalysts by metal-organic chemical vapor deposition (MOCVD) method. The copper supported on MgO… read more here.
Keywords: mgo; microscopy; hydrogenation; preparation mgo ... See more keywords
High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c06927
Abstract: In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga2O3/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga2O3 (including a, ε, ε/β, and… read more here.
Keywords: mocvd; self powered; ga2o3 gan; powered ga2o3 ... See more keywords
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.5009757
Abstract: This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered… read more here.
Keywords: oxygen; al2o3; stress; oxygen flow ... See more keywords
Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe2 monolayers
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb947
Abstract: Structural defects in transition metal dichalcogenide (TMDC) monolayers (ML) play a significant role in determining their (opto)electronic properties, triggering numerous efforts to control defect densities during material growth or by post-growth treatments. Various types of… read more here.
Keywords: growth; mocvd; crystal quality; precursor ratio ... See more keywords
Process-Induced Nanostructures on Anatase Single Crystals via Pulsed-Pressure MOCVD
Sign Up to like & getrecommendations! Published in 2020 at "Materials"
DOI: 10.3390/ma13071668
Abstract: The recent global pandemic of COVID-19 highlights the urgent need for practical applications of anti-microbial coatings on touch-surfaces. Nanostructured TiO2 is a promising candidate for the passive reduction of transmission when applied to handles, push-plates… read more here.
Keywords: dimension; thickness; pulsed pressure; mocvd ... See more keywords