Investigation of carbon incorporation in laser-assisted MOCVD of GaN
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0144584
Abstract: Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD… read more here.
Keywords: carbon; growth; incorporation; assisted mocvd ... See more keywords
Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16093424
Abstract: Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects… read more here.
Keywords: luminescence characteristics; characteristics mocvd; intensity; gan structures ... See more keywords