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Published in 2019 at "Small"
DOI: 10.1002/smll.201901743
Abstract: Sb2 Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed and novel effects are predicted for this and other chalcogenide alloys…
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Keywords:
sb2 te3;
te3 nps;
mocvd growth;
te3 ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/1.5145031
Abstract: Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature sensitivity, and larger modulation bandwidths than the conventional quantum well lasers. For III–V lasers monol...
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Keywords:
mocvd growth;
inp based;
growth inp;
quantum dash ... See more keywords
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Published in 2017 at "IEEE Journal of Photovoltaics"
DOI: 10.1109/jphotov.2016.2614346
Abstract: Increasing epitaxial growth rate is an important path toward III-V solar cell cost reductions; however, photovoltaic device performance has been shown to degrade with increasing growth rate. In this study, gallium arsenide (GaAs) material has…
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Keywords:
mocvd growth;
growth rates;
growth rate;
growth ... See more keywords
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Published in 2018 at "Crystals"
DOI: 10.3390/cryst8080311
Abstract: The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes…
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Keywords:
mocvd growth;
gaas;
laser structures;
quantum wells ... See more keywords