InAl(Ga)N: MOCVD thermodynamics and strain distribution
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DOI: 10.1016/j.jallcom.2021.162123
Abstract: Abstract One of the obstacles in obtaining high quality and high indium-molar fraction InAl(Ga)N is the higher vapor pressure of nitrogen over group-III elements, especially indium. In this work, we used a thermodynamically motivated approach… read more here.
Keywords: inal mocvd; thermodynamics; mocvd thermodynamics; strain distribution ... See more keywords