Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.08.005
Abstract: Abstract In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron… read more here.
Keywords: mode; split floating; floating gates; enhancement mode ... See more keywords
High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2017.2778087
Abstract: In this paper, we report on a novel E-mode AlGaN/GaN gates-seperating groove heterostructure field-effect transistor (GSG HFET). The current turn-on/off is controlled by changing gate voltage to regulate the horizontal energy band between the double… read more here.
Keywords: mode algan; hfet; algan gan; drain current ... See more keywords
Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2625304
Abstract: This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray… read more here.
Keywords: sub sub; enhancement mode; algan gan; sup ... See more keywords