Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
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DOI: 10.1109/jeds.2023.3265372
Abstract: In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) platform. The DG-NAND circuit has… read more here.
Keywords: dual gate; mis hemts; mode device; gan mis ... See more keywords