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Published in 2023 at "CrystEngComm"
DOI: 10.1039/d3ce00132f
Abstract: A novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion. This strategy can provide new ideas for the commercialisation of E-mode devices.
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Keywords:
high electron;
gan high;
novel mode;
mode gan ... See more keywords
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1
Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2722002
Abstract: This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate…
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Keywords:
gan mis;
sub sub;
sub;
gate insulator ... See more keywords
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1
Published in 2021 at "Micromachines"
DOI: 10.3390/mi12060617
Abstract: AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode…
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Keywords:
mode;
150 wafer;
gan gate;
technology ... See more keywords