Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion
Sign Up to like & getrecommendations! Published in 2023 at "CrystEngComm"
DOI: 10.1039/d3ce00132f
Abstract: A novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion. This strategy can provide new ideas for the commercialisation of E-mode devices. read more here.
Keywords: high electron; gan high; novel mode; mode gan ... See more keywords
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
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DOI: 10.1109/led.2017.2722002
Abstract: This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate… read more here.
Keywords: gan mis; sub sub; sub; gate insulator ... See more keywords
Direct Drive D-Mode GaN HEMT Switching Characteristics and Turn-Off Loss Reductions
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2024.3496672
Abstract: This article aims to evaluate the depletion-mode gallium nitride high electron mobility transistor (d-mode GaN HEMT) using direct-drive gating and double pulse test to assess switching energy. The gate driving circuit features a modified cascode… read more here.
Keywords: direct drive; mode; turn loss; mode gan ... See more keywords
E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
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DOI: 10.3390/mi12060617
Abstract: AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode… read more here.
Keywords: mode; 150 wafer; gan gate; technology ... See more keywords