Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison
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DOI: 10.1088/1674-4926/39/7/074001
Abstract: An improved small-signal parameter extraction technique for short channel enhancement-mode N-polar GaN MOS-HEMT is proposed, which is a combination of a conventional analytical method and optimization techniques. The extrinsic parameters such as parasitic capacitance, inductance… read more here.
Keywords: polar gan; parameter extraction; mode polar; small signal ... See more keywords