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Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2639042
Abstract: In this letter, for both non-degenerate conduction and degenerate conduction, a new compact model of amorphous oxide semiconductor thin-film transistors is developed. The contributions of the trapped and free charges are considered in the closed-form…
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Keywords:
amorphous oxide;
oxide semiconductor;
potential based;
surface potential ... See more keywords