Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.10.022
Abstract: Abstract We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS… read more here.
Keywords: universal model; model bias; bias stress; stress induced ... See more keywords
Time dependent model bias correction for model based reliability analysis
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DOI: 10.1016/j.strusafe.2017.02.001
Abstract: Abstract Model based reliability analysis could be misleading if the simulation model were not validated at the intended design configuration. To improve model accuracy without conceptually revising the model, various model bias correction approaches have… read more here.
Keywords: model; time dependent; reliability analysis; model bias ... See more keywords