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Published in 2018 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2018.2823586
Abstract: A novel electrical model that describes the time evolution of oxide memristive devices is proposed. Starting from some considerations about the physical characteristics of the resistance change in the active layer of these devices, the…
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Keywords:
time model;
model memristive;
memristive devices;
model ... See more keywords