Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current
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DOI: 10.1007/s11665-018-3144-x
Abstract: The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply… read more here.
Keywords: tfet; modeling dual; dual gate; gate material ... See more keywords