Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
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DOI: 10.3390/mi12020199
Abstract: We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended… read more here.
Keywords: modeling gan; gan gate; compact modeling; potential based ... See more keywords