Computer modeling of HMCz Si growth
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DOI: 10.1016/j.jcrysgro.2019.125413
Abstract: Abstract Czochralski growth of 300 mm diameter Si crystals with applied horizontal magnetic field is considered. A combined 2D-3D computer model is used for detailed description of thermal convection and oxygen transport in the melt. The… read more here.
Keywords: growth computer; hmcz growth; computer modeling; computer ... See more keywords