Physical modeling for photo-capacitance characteristics of metal oxide TFTs
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DOI: 10.1063/5.0185267
Abstract: We propose an amorphous metal oxide thin film transistor photo-capacitance model in the depletion region that takes Fermi level splitting and band-bending rearrangement into consideration. The split Fermi level is used to characterize the variation… read more here.
Keywords: metal oxide; physical modeling; photo capacitance; modeling photo ... See more keywords