Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D Transistors
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2766693
Abstract: In this paper, a physics-based compact model for calculating the semiconductor charges and gate capacitance of III–V nanowire (NW) MOS transistors is presented. The model calculates the subband energies and the semiconductor charges by considering… read more here.
Keywords: modeling quantum; confinement; gate; capacitance iii ... See more keywords
A Consistent Approach to Modeling Quantum Observers
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DOI: 10.3390/e27030302
Abstract: A number of no-go theorems have shown that Wigner’s Friend scenarios combined with various metaphysical assumptions lead to contradictions in any version of quantum theory. We present an alternative constructive approach that only assumes that… read more here.
Keywords: consistent approach; approach modeling; modeling quantum; quantum observers ... See more keywords